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Arai, Taiki*; Yoshigoe, Akitaka; Motohashi, Mitsuya*
Zairyo No Kagaku To Kogaku, 60(5), p.153 - 158, 2023/10
Si oxide films are currently widely used as insulating materials in electronic devices and biomaterials. The atomic bonding state of these films significantly influences the properties of each device, thus it is particularly necessary to understand and control the chemical bonding state between Si and O in the films. In this study, the Si oxide films formed by anodic oxidation on Si substrate surfaces in extremely low concentrations of HF solutions were analyzed by X-ray photoelectron spectroscopy mainly focusing on Si2p and F1s spectra. Although the HF concentration is in the order of ppm, the films contain percent order of F atoms, suggesting the formation of Si-F and Si-O-F bonds in the films. It was also found that the different depth profiles for F and O atoms was observed, indicating that the surface reaction processes seem to be different depending on each element.
Ogawa, Shuichi*; Yoshigoe, Akitaka; Tang, J.*; Sekihata, Yuki*; Takakuwa, Yuji*
Japanese Journal of Applied Physics, 59(SM), p.SM0801_1 - SM0801_42, 2020/07
Times Cited Count：5 Percentile：32.24(Physics, Applied)In this paper, we review the study of the unified Si oxidation reaction model mediated by point defect generation, in which O
dissociative adsorption occurs at dangling bonds of point defects (emitted Si atoms and vacancies) at the SiO/Si interface, and the point defect generation rate is given by a combination of oxidation-induced strain, thermal strain due to the difference in thermal expansion coefficient between Si and SiO, thermal excitation of Si emission rate, and heat of adsorption.
/Si(001) and SiO/Si(111) interfaces studied by X-ray photoelectron spectroscopy and scanning tunnelling microscopyTang, J.*; Ogawa, Shuichi*; Yoshigoe, Akitaka; Teraoka, Yuden; Takakuwa, Yuji*
no journal, ,
Thermal decomposition of SiO layers formed on Si substrate is well known to proceed via the inhomogeneous void nucleation and subsequent 2D enlargement. However, the void nucleation mechanism is still not clear yet. In this study, the thermal decomposition kinetics of SiO/Si(001) and SiO/Si(111) were observed in real time by X-ray photoelectron spectroscopy using synchrotron radiation at SPring-8 to obtain simultaneously information on the interfacial strained Si atom as well as the oxide thickness and oxidation states.
